High-k相关论文
Solution-Processed High-k Dielectric and Interface Engineering for Low-Voltage Organic Thin Film Tra
Albeit huge progress has been made in improving the performance of organic thin film transistors (OTFTs) ,the high opera......
本论文主要研究Hf-Ti-O薄膜作为栅介质材料的MOS和ETSOI MOSFET器件性能.通过MOS器件性能研究,得到以Hf-Ti-O薄膜作为栅介质材料具......
Flexible and wearable devices are one of the most important and hottest topics nowadays.The key issues to realize ap......
Post-deposition-annealed lanthanum-doped cerium oxide thin films:structural and electrical propertie
The metal-organic-decomposed lanthanum cerium oxide(LaCeO2)solution was spin-coated on p-type Si substrate to form thin ......
The previously published U-Pb and 40Ar/39Ar ages and our 21 newly-obtained 40Ar/39Ar ages suggest that the Cenozoic magm......
Our two newly obtained high-quality 40Ar/39Ar ages suggest that the high-K volcanic rocks of the Lawuxiang Formation in ......
High-k材料是指介电常数k高于SiO2的材料。使用high-k材料做栅绝缘层,是减小MOS器件栅绝缘层直接隧道击穿(DirectTunneling,DT)电......
Ultra-thin HfO2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO2 target and subsequently ann......
This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge......
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Hafnium oxide thin films doped with different concentrations of yttrium are prepared on Si (100) substrates at room temp......
The key technologies for the dual high-k and dual metal gate,such as the electrical optimization of metal insert poly-Si......
该论文工作旨在在器件模拟程序(PISCES-Ⅱ)中引入新的线性方程求解方法以及High-k材料MOS器件的隧穿电流等器件特性模拟.主要包括......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last pro
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
This work described the electrical characteristics of a kind of amorphous Gd2O3-doped HfO2 insulator for high-k metal-ox......
采用磁控溅射法制备了TiO2／Al2O3堆栈结构高k栅介质薄膜，研究了不同后处理条件对等效氧化物厚度，界面电荷和界面扩散的影响。实验结果......
Ultra-thin hafnium-oxide gate dielectric films deposited by atomic layer deposition technique using HfCl4 and H2O precur......
运用一种全量子模型研究基于氧化铪的高k栅介质纳米MOSFET栅电流，该方法特别适用于高k栅介质纳米MOS器件。还能用于多层高k栅介质纳......
High-k材料是指介电常数k高于Si02的材料.使用high-k材料做栅绝缘层,是减小MOS器件栅绝缘层直接隧道击穿(Direct Tunneling,DT)电......
采用Schroedinger-Poisson方程自洽全量子求解法研究了MOS器件不同介质材料和栅结构栅电流，该模型对栅电流中的三维电流成分用行波......
随着非挥发性存储器件的尺寸持续缩小,SONOS结构存储器件又重新被重视.简单介绍超短栅长SONOS器件和2bit SONOS器件,重点介绍改进......
随着非挥发性存储器件的尺寸持续缩小,SONOS结构存储器件又重新被重视.简单介绍超短栅长SONOS器件和2bit SONOS器件,重点介绍改进......
随着CMOS器件特征尺寸的不断缩小,SiO2作为栅介质材料已不能满足集成电路技术高速发展的需求,利用高k栅介质取代SiO2栅介质成为微......
随着微电子技术的飞速发展，按照摩尔定律发展的要求，SiO2的极限厚度已经成为Si基集成电路提高集成度的瓶颈。寻求代替SiO2的其它新一......
针对高耦合系数层叠结构的片上变压器提出了一个新型2-Π集总元件等效电路模型.主要基于解析公式提取了该模型的元件参数.由于该模......
Configuration-constrained potential-energy-surface calculations have been performed to investigate the K isomerism in th......
Growing a silicon (Si) layer on top of stacked Si-germanium (Ge) compressive layer can introduce a tensile strain on the......
Ordovician Granitoids and Silurian Mafic Dikes in the Western Kunlun Orogen,Northwest China:Implicat
The western Kunlun orogen in the northwest Tibet Plateau is related to subduction and collision of Proto-and Paleo-Tethy......
2007年11月16日，英特尔发布一系列新处理器产品，其中包括用于双路服务器的Xeon系列处理器和用于高端PC的处理器。它们均采用了目前最......
纳米时代,发展新型的高介电常数(high-k)电介质材料以取代沿用至今的二氧化硅作为闸极电介质是当前微电子材料领域所面临的最大技......
